Method for detecting defects

Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed

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Details

25055941, 3562373, G01R 3126, H01L 2166, G01N 2100, G01N 2186

Patent

active

060252065

ABSTRACT:
A method for detecting defects comprises scanning a clean blank wafer for figuring out the quantity and locations of particles; then, scanning the wafer again after performing coating, exposure, and development processes on the wafer; comparing the two scanning results for figuring out the locations of the defects and calculating quantities of the defects by checking the patterns and colors, and then to obtain the quantities and types of the defects in mechanisms and photoresist respectively.

REFERENCES:
patent: 4965454 (1990-10-01), Yamauchi et al.
patent: 5715052 (1998-02-01), Fujino et al.

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