Method for detecting Cu concentration of silicon substrate

Details Method for detecting Cu concentration of silicon substrate Method for detecting Cu concentration of silicon substrate

2004-05-12

2009-10-13

Warden, Jill (Department: 1797)

Chemistry: analytical and immunological testing

Metal or metal containing

Cu, ag, au

C438S471000

Reexamination Certificate

active

07601541

ABSTRACT:
To expediently and quantitatively estimate Cu within a silicon substrate without fully dissolving the silicon substrate and to ascertain the process contamination, there is provided a method for quantitatively determining the Cu concentration in a Cu containing silicon substrate having obverse and converse surfaces, the silicon substrate contains at least 3×1018atoms/cm3of boron and is heated at a temperature of no more than 600° C., the improvement comprises heating the converse surface of the substrate at a temperature between 300° C. to 350° C. for a period of 1 to 12 hours and then quantitatively analyze the Cu concentration at obverse and converse surfaces of the heated substrate.

REFERENCES:
patent: 5300187 (1994-04-01), Lesk et al.
patent: 5686314 (1997-11-01), Miyazaki
patent: 2003/0104680 (2003-06-01), Stefanescu et al.
patent: 2003/0181023 (2003-09-01), Kimura
patent: 09064052 (1977-07-01), None
patent: 09064133 (1977-07-01), None
patent: 9-064133 (1997-03-01), None
patent: 9-082770 (1997-03-01), None
patent: 09-064052 (1997-07-01), None
patent: 09-064133 (1997-07-01), None
patent: 2001-196433 (2001-07-01), None
English language Abstract of JP 9-064133.
English language Abstract of JP 9-082770.

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