Method for detecting crystal defects in a silicon single crystal

Details Method for detecting crystal defects in a silicon single crystal Method for detecting crystal defects in a silicon single crystal

1997-03-17

1998-06-16

Powell, William

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Optical characteristic sensed

216 84, 438 14, H01L 2100

Patent

active

057669767

ABSTRACT:
This invention relates to a method for detecting crystal defects in a silicon single crystal substrate which contains a dopant with the concentration of at least 7.0.times.10.sup.16 atoms/cm.sup.3. In the method, a native oxide film 2 on the surface of a silicon single crystal substrate 1 is removed, then copper 4 is deposited on the surface of silicon single crystal substrate 1, then the silicon single crystal substrate 1 is etched by an alkaline aqueous solution. Finally, the etched surface of silicon single crystal substrate 1 is observed by visual observation or by an optical microscope to evaluate crystal defects 3 of silicon single crystal substrate 1.

REFERENCES:
patent: 5223443 (1993-06-01), Chinn et al.
patent: 5382551 (1995-01-01), Thakur et al.

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