Method for detecting a void

Semiconductor device manufacturing: process – With measuring or testing

Reexamination Certificate

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Details

C438S016000, C438S633000, C257SE21530

Reexamination Certificate

active

07901954

ABSTRACT:
Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a metal portion is formed on the insulating film to fill the plurality of holes. The metal portion is polished until the insulating film is exposed and a recessed portion is formed in the void detection structure. It is determined if a void exists in the element portion of the semiconductor device by determining whether or not a void is exposed at a surface of the recessed portion of the void detection structure.

REFERENCES:
patent: 6159756 (2000-12-01), Yamada
patent: 6210980 (2001-04-01), Matsuda
patent: 7074626 (2006-07-01), Parikh et al.
patent: 7262066 (2007-08-01), McNamara et al.
patent: 2009/0066358 (2009-03-01), Smayling et al.

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