Method for detaching layers with low magnetic permeability

Details Method for detaching layers with low magnetic permeability Method for detaching layers with low magnetic permeability

2011-04-21

2011-12-20

Garber, Charles (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S029000, C438S478000, C438S488000, C257SE21040

Reexamination Certificate

active

08080433

ABSTRACT:
A method for detaching a first material layer from a second material layer includes following steps: forming a high-magnetic-permeability material layer on a first material layer comprised of low-magnetic-permeability material; removing a portion of the high-magnetic-permeability material layer to expose a portion of the first material layer; epitaxially growing a second material layer comprised of low-magnetic-permeability material on the exposed portion of the first material layer and the high-magnetic-permeability material layer; cooling the first and second material layers; heating the high-magnetic-permeability material layer, thus detaching the first material layer from the second material layer.

REFERENCES:
patent: 6287882 (2001-09-01), Chang et al.
patent: 6794684 (2004-09-01), Slater et al.
patent: 7189626 (2007-03-01), Elkins et al.

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