Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2011-08-02
2011-08-02
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S029000, C438S478000, C438S488000, C257SE21040
Reexamination Certificate
active
07989225
ABSTRACT:
A method for detaching a first material layer from a second material layer includes following steps. Firstly, a high-magnetic-permeability material layer is formed on a first material layer. Secondly, a second material layer is formed on the high-magnetic-permeability material layer. Thirdly, the first and second material layers are cooled such that the first and second material layers shrink, wherein the first and second material layers are low-magnetic-permeability materials. Finally, the high-magnetic-permeability material layer is heated by applying a high-frequency radiofrequency electromagnetic wave thereto such that the high-magnetic-permeability material layer expands, thus detaching the first material layer from the second material layer.
REFERENCES:
patent: 5798537 (1998-08-01), Nitta
patent: 6794684 (2004-09-01), Slater et al.
patent: 2008/0230794 (2008-09-01), Yasuda et al.
Advanced Optoelectronic Technology Inc.
Chew Raymond J.
Ghyka Alexander G
Mustapha Abdulfattah
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