Method for deposition of a refractory metal nitride and method f

Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized

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427255, 4272551, 4272557, 4272481, 4271261, 427404, 437200, C23C 1600

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053935659

ABSTRACT:
A refractory metal nitride is deposited at a temperature of 600.degree. C. according to a chemical vapor phase deposition method by using a source gas containing a refractory metallic element and a reduction gas containing one of an alkyl amino compound, alkyl azide compound, hydrazine and a hydrazine alkyl compound for reducing the source gas. This refractory metal nitride is used as a barrier metal material for interconnection in a semiconductor device. When forming a refractory metal nitride as a barrier metal on a silicon layer or forming a contact metal between the barrier metal and the silicon layer, a natural oxide film on the surface of the silicon layer set in a pressure-reduced atmosphere is removed by reducing with hydrazine or a hydrazine alkyl compound.

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