Method for depositing silicon films and related materials by a g

Details Method for depositing silicon films and related materials by a g Method for depositing silicon films and related materials by a g

1979-12-12

1982-12-14

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 86, C23C 1100

Patent

active

043638287

ABSTRACT:
Disilane (Si.sub.2 H.sub.6), trisilane (Si.sub.3 H.sub.8) or a higher order silane is applied in a glow discharge process to rapidly and efficiently form a film of hydrogenated amorphous silicon on a substrate. An inductively coupled RF glow discharge apparatus, a capacitively coupled glow discharge apparatus or a DC glow discharge apparatus may be employed to deposit the amorphous silicon on a conducting or non-conducting substrate. The disilane or higher order silanes may also be combined in a glow discharge process with gases which contain elements such as nitrogen or oxygen to rapidly deposit corresponding compound films.

REFERENCES:
patent: 3424661 (1969-01-01), Androshuk et al.
patent: 3655438 (1972-04-01), Sterling et al.
patent: 4064521 (1977-12-01), Carlson
patent: 4142195 (1979-02-01), Carlson et al.

Affiliated with

Also associated with

Rating

Method for depositing silicon films and related materials by a g does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing silicon films and related materials by a g, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing silicon films and related materials by a g will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1201481