Method for depositing polysilicon over TiO.sub.2

Details Method for depositing polysilicon over TiO.sub.2 Method for depositing polysilicon over TiO.sub.2

1983-11-30

1985-06-04

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

427 96, 427 99, 4271263, H01L 21316

Patent

active

045214468

ABSTRACT:
Hydrogen annealing permits deposition of good quality polysilicon atop TiO.sub.2. Hydrogen annealing of TiO.sub.2 prevents the tremendous hydrogen affinity of as-deposited TiO.sub.2 from disrupting process reactions during deposition of polysilicon.

REFERENCES:
patent: 3650815 (1972-03-01), Ghoshtagore
patent: 3916041 (1975-10-01), Chu
patent: 4200474 (1980-04-01), Morris
patent: 4250206 (1981-02-01), Bate

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