Method for depositing photoconductive zinc tin phosphide

Details Method for depositing photoconductive zinc tin phosphide Method for depositing photoconductive zinc tin phosphide

1980-10-24

1982-01-19

Hoffman, James R.

Coating processes

Electrical product produced

Photoelectric

4272552, H01L 3118

Patent

active

043117287

ABSTRACT:
Invention teaches a combined chemical vapor deposition/thermal ion exchange method for producing photoconductive thin films of zinc tin phosphide. A layer of tin oxide is converted to zinc tin phosphide by annealing in the presence of gaseous phosphine and zinc metal vapor or zinc chloride vapor. The thin film zinc tin phosphide taught by the present invention is amenable to use in large area applications such as solar cells and the like.

REFERENCES:
Rubenstein et al., "Preparation and Characteristics of Zinc Tin Phosphide", Journal of Physics and Chemistry of Solids, vol. 29, pp. 551-552, (1968).
Mughal et al., "Preparation and Phase Studies of the Ternary Semiconductor Compounds Zinc Tin Phosphide, Zinc Germanium Phosphide, Zinc Silicon Phosphide, Cadmium Germanium Phosphide and Cadmium Silicon Phosphide", Journal of Materials Science, vol. 4, pp. 895-901, (1969).

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