Method for depositing metal

Details Method for depositing metal Method for depositing metal

1997-04-25

1999-08-10

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429815, 156345, 118724, 118728, C23C 1450

Patent

active

059353961

ABSTRACT:
A method of depositing aluminum or other metals so that vias are more completely filled is disclosed. The wafer or substrate is preheated to a temperature of approximately 200.degree. C. Then the wafer is placed in an ambient of approximately 350.degree. C. while metal deposition commences. The resulting metal layer has a gradually increasing grain size and exhibits improved via filling. Also disclosed is a method and apparatus (involving cooling of support structures) for deposition of an anti-reflective coating to prevent rainbowing or spiking of the coating into the underlying metal.

REFERENCES:
patent: 1954950 (1934-04-01), Russell
patent: 4512391 (1985-04-01), Harra
patent: 4743570 (1988-05-01), Lamont, Jr.
patent: 4886565 (1989-12-01), Koshiba et al.
patent: 4949783 (1990-08-01), Lakios et al.
patent: 5267607 (1993-12-01), Wada
patent: 5427670 (1995-06-01), Baggerman et al.

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