Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1989-11-17
1991-11-26
Beck, Shrive
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427 38, 4272552, 4272553, C23C 1640, C23C 1650
Patent
active
050681249
ABSTRACT:
A method for depositing high quality silicon dioxide in a plasma enhanced chemical vapor deposition tool is described. The reactant gases are introduced into the tool together with a large amount of an inert carrier gas. A plasma discharge is established in tool by using a high RF power density thereby depositing high quality silicon dioxide at very high deposition rates. In a single wafer tool, the RF power density is in the range of 1-4 W/cm.sup.2 and the deposition rate is from 600-1500 angstroms per minute for depositing high quality SiO.sub.2 films.
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Batey John
Tierney Elaine
Beck Shrive
Burke Margaret
International Business Machines - Corporation
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