Method for depositing epitaxial monocrystalline semiconductive l

Details Method for depositing epitaxial monocrystalline semiconductive l Method for depositing epitaxial monocrystalline semiconductive l

1978-06-09

1979-04-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 118415, H01L 21208

Patent

active

041499140

ABSTRACT:
A method of depositing a plurality of epitaxial monocrystalline layers of semiconductive materials onto an individual substrate of a plurality of substrates via the sliding liquid phase epitaxy technique whereby the spacing between respective melt-containing chambers and respective substrate-receiving recesses are substantially equal to one another and, during the deposition stage, the temperature of all melts located on respective substrates is lowered a substantially identical amount so that a corresponding epitaxial layer grows on each such substrate.

REFERENCES:
patent: 3753801 (1973-08-01), Lockwood et al.
patent: 3854447 (1974-12-01), Kobayasi
patent: 3899371 (1975-08-01), Ladany et al.
patent: 3909317 (1975-09-01), Itoh et al.
patent: 3933538 (1976-01-01), Akai et al.
patent: 4028148 (1977-06-01), Horikoshi
patent: 4072544 (1978-02-01), DeWinter et al.

Affiliated with

Also associated with

Rating

Method for depositing epitaxial monocrystalline semiconductive l does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for depositing epitaxial monocrystalline semiconductive l, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for depositing epitaxial monocrystalline semiconductive l will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1260536