Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Patent
1996-05-29
1998-10-13
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
257641, 257777, H01L 2358
Patent
active
058216030
ABSTRACT:
Methods for depositing a nitride layer on a surface of an integrated circuit wafer for protecting against over etching during subsequent etching of overlying layers. A first nitride deposition method utilizes a chemical vapor deposition process having a variable ammonia flow rate. The ammonia flow rate is decreased during the chemical vapor deposition process. A second nitride deposition method produces an oxygen rich etch stop film on the surface of the nitride layer. The method comprises the application of an oxygen/argon plasma treatment to the surface of the nitride layer in a reactive ion etching process. A third nitride deposition method produces an oxygen rich etch stop film on the surface of the nitride layer. The method comprises the application of a nitrous oxide plasma treatment to the surface of the nitride layer in a chemical vapor deposition chamber.
REFERENCES:
patent: 5481133 (1996-01-01), Hsu
Meier Stephen
MicroUnity Systems Engineering, Inc.
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