Coating processes – With pretreatment of the base – Etching – swelling – or dissolving out part of the base
Patent
1996-03-18
1998-08-04
King, Roy V.
Coating processes
With pretreatment of the base
Etching, swelling, or dissolving out part of the base
427534, 427535, 427578, 427255, 4272551, 4272552, 4272557, 438488, 438925, 148DIG1, 148DIG122, B05D 304, B05D 306
Patent
active
057890307
ABSTRACT:
A method for forming an in-situ doped amorphous or polycrystalline silicon thin film on a substrate is provided. The method includes placing the substrate in a reaction chamber of a CVD reactor and introducing a silicon gas species into the reaction chamber. The flow of the silicon gas species is continued for a time period sufficient to dehydrate the substrate and form a thin layer of silicon. Following formation of the thin layer of silicon, a dopant gas species is introduced into the reaction chamber and continued with the flow of the silicon gas species to form the doped silicon thin film. In an illustrative embodiment a phosphorus doped amorphous silicon thin film for a cell plate of a semiconductor capacitor is formed in a LPCVD reactor.
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patent: 5352636 (1994-10-01), Beinglass
Wolf, S. and Tauber R. N., Silicon Processing for the VLSI Era, Vol. 1-Process Technology, Lattice Press, 1986, pp. 177-182.
Ghandhi, Sorab K., VLSI Fabrication Principles, Silicon and Gallium Arsenide, 1994, pp. 537-539.
Gratton Stephen A.
King Roy V.
Micro)n Technology, Inc.
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