Method for depositing dielectric layers

Fishing – trapping – and vermin destroying

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148DIG18, 427 99, 427255, 437228, H01L 2102

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active

051206803

ABSTRACT:
Disclosed is a method for forming a silicon dioxide layer on a substrate by radio-frequency deposition from a plasma comprising oxygen, argon, and tetraethyl orthosilicate (TEOS) or tetramethyl cyclotetrasiloxane (TMCTS). A negative bias is imparted to the substrate. The resulting ion bombardment induces surface migration. Because TEOS and TMCTS have a relatively high mean free path for surface migration, the filling of soft spots and key holes is promoted.

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