Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board
Patent
1976-08-30
1978-05-16
Weiffenbach, Cameron K.
Coating processes
Electrical product produced
Integrated circuit, printed circuit, or circuit board
427248A, 357 52, 357 54, 357 73, B05D 512
Patent
active
040899926
ABSTRACT:
A substrate article coated with a pinhole free film of silicon nitride produced by reacting silane with a nitrogen containing compound which upon decomposition produces nascent nitrogen and sufficient amounts of a carrier gas that is inert to the reactants and heating said substrate to a temperature above about 500.degree. C to cause the deposition of silicon nitride film on said substrate.
REFERENCES:
patent: 448915 (1891-03-01), Erlwein
patent: 3200015 (1965-08-01), Kuntz
patent: 3226194 (1965-12-01), Kuntz
patent: 3328214 (1967-06-01), Hugle
patent: 3455020 (1969-07-01), Dawson et al.
patent: 3465209 (1969-09-01), Denning et al.
patent: 3503798 (1970-03-01), Yoshioka et al.
patent: 3520722 (1970-07-01), Scott, Jr.
patent: 3531696 (1970-09-01), Haneta et al.
patent: 3565674 (1971-02-01), Boland et al.
patent: 3573096 (1971-03-01), Tombs
patent: 3649886 (1972-03-01), Kooi
patent: 3652324 (1972-03-01), Chu et al.
patent: 3788894 (1974-01-01), Scherber
Chemical Abstracts, "Semiconductor Device", p. 1321h, 1964.
Doo, "Silicon Nitride, A New Diffusion Mask," in IEEE Transactions on Electron Devices, vol. ED-13(7), pp. 561-563, Jul. 1966.
Doo et al., "Preparation and Properties of Pyrolytic Silicon Nitride", in J. Electrochem. Soc., 113(12), pp. 1279-1281, Dec. 1966.
Bean et al., "Some Properties of Vapor Deposited Silicon Nitride Films Using the SiH.sub.4 -NH.sub.3 -H.sub.2 System," in J. Electrochem. Soc.: Solid State Science, 114(7), pp. 733-737, Jul. 1967.
Chu et al., "The Preparation and Properties of Amorphous Silicon Nitride Films", in J. Electrochem. Soc., 114(7), pp. 717-722, Jul. 1967.
Schaffer et al., "Vapor Phase Growth and DC Breakdown of Silicon Nitride Films", in Amer. Ceramic Soc. Bull., 49(5), pp. 536-538, 1970.
Doo Ven Y.
Nichols Donald R.
Silvey Gene A.
International Business Machines - Corporation
Powers Henry
Weiffenbach Cameron K.
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