Method for depositing compound semiconductor crystal

Details Method for depositing compound semiconductor crystal Method for depositing compound semiconductor crystal

1993-09-02

1995-02-28

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 93, 117104, 437133, C30B 2300

Patent

active

053927303

ABSTRACT:
A crystal of a compound semiconductor is deposited on a substrate using a metal organic vapor phase epitaxy within a reaction enclosure having a vertical flow of deposition gas supplied through a gas injector within the deposition enclosure. The deposition gas is supplied in a plurality of divided flow paths in which the flow rates are individually controlled. The injector comprises a plurality of gas jet ports which receive respective, plural flow paths and which are disposed in a two-dimensional array having dimensions corresponding to the two-dimensional main surface dimensions of the substrate thereby to supply a uniform flow of deposition gas over the entire two-dimensional main surface of the substrate. The method and apparatus have special application in the deposition of quaternary III--V compound semiconductor.

REFERENCES:
patent: 4066481 (1978-01-01), Manasevit et al.
patent: 4368098 (1988-01-01), Manasevit
patent: 4829021 (1989-05-01), Fraas et al.
patent: 4980204 (1990-12-01), Fujii et al.
patent: 5002630 (1991-03-01), Kermani et al.
patent: 5138973 (1992-08-01), Davis et al.

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