Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state
Patent
1995-11-22
1999-11-23
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
117952, 4272551, 427255, 4272481, C30B 2504
Patent
active
059893389
ABSTRACT:
An embodiment of the present invention teaches a method for forming a storage capacitor during semiconductor memory device fabrication, the method comprising the steps of: forming a first capacitor plate structure comprising a polysilicon material having an aspect ratio comprising a vertical component and a horizontal component; wherein the vertical component of the first capacitor plate structure is greater in dimension than the horizontal component of the first capacitor plate structure; depositing a silicon nitride layer over the first capacitor plate structure by exposing the first capacitor plate structure to a gas vapor phase of an organometallic precursor and to an nitrogen based gas in an Metal Organic Chemical Vapor Deposition (MOCVD) chamber; and forming a second capacitor plate structure over the silicon nitride layer, the second capacitor plate structure being positioned to span at least a portion of the first capacitor plate structure.
REFERENCES:
patent: 4312921 (1982-01-01), Hirai et al.
patent: 4863755 (1989-09-01), Hess et al.
patent: 4992299 (1991-02-01), Hochberg et al.
patent: 5322913 (1994-06-01), Blum et al.
Arthur K. Hochberg et al, "Diethylsilane as a Silicon Source for the Deposition of Silicon Nitride and Silicon Oxynitride Films by LPCVD", 1991 Materials Research Society, pp. 509-513.
Yoshihiki Kusakabe et al, "Conformal Deposition on a Deep-Trenched Substrate by MOCVD", 1993 Applied Surface Science, pp. 763-767.
Frieser, "Direct Nitridation of Silicon Substrates", J. Electrochemical Society: Solid State Science, pp. 1092-1094, Oct. 1968.
Grow et al, "Plasma Enhanced Chemical Vapor Deposition of Silicon Nitride from Novel organosilanes", Mater. Res. Soc. Symp. Proc. abstract only, 1994.
DeBoer Scott J.
Thakur Randhir P. S.
Kunemund Robert
Micro)n Technology, Inc.
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