Fishing – trapping – and vermin destroying
Patent
1994-08-12
1995-05-09
Quach, T. N.
Fishing, trapping, and vermin destroying
437231, 437241, 437978, H01L 2128, H01L 21318
Patent
active
054139635
ABSTRACT:
A method of forming a metallurgy system on a semiconductor substrate is provided. A first conformal layer of SiO.sub.2 is deposited on the substrate using plasma enhanced chemical vapor deposition (PECVD) techniques. Subsequently a non-conformal organic layer is deposited by spin-on-glass (SOG) techniques over the first layer, and heated to smoothen the surface. The organic SOG deposited layer is then subjected to a N.sub.2 plasma environment and a second conformal layer of SiO.sub.2 is deposited, and then vias etched through the layers. The resist layer used to define vias is removed by an O.sub.2 plasma and the device metallurgy completed.
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Chung Army
Liaw Her-Song
Yen Po-Wen
Quach T. N.
Saile George O.
Stoffel Wolmar J.
United Microelectronics Corporation
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