Method for depositing a silicon oxide layer

Details Method for depositing a silicon oxide layer Method for depositing a silicon oxide layer

1996-05-06

1999-10-12

Pianalto, Bernard

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

42725537, 427255393, C23C 1600

Patent

active

059652039

ABSTRACT:
A method for depositing a silicon oxide layer by ozone-activated gas phase deposition, uses tetraethyl orthosilicate (TEOS). An initially high gas flow ratio of TEOS to ozone is increasingly varied to a low steady-state ratio.

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