Method for depositing a platinum layer on a silicon wafer

Details Method for depositing a platinum layer on a silicon wafer Method for depositing a platinum layer on a silicon wafer

1995-11-22

1998-04-07

Niebling, John

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 128

Patent

active

057364222

ABSTRACT:
The present invention relates to a method of depositing a platinum thin-film on a silicon wafer. The method includes the steps of depositing a platinum layer on an insulating oxide layer under an oxidation atmosphere to form a mixture film consisted of platinum grains, platinum oxide grains and oxygen adhered to those grains (hereinafter, "the mixture film" to be referred as "oxygen containing platinum thin-film"); depositing an additional platinum thin-film to a desired thickness on the oxygen containing platinum thin-film under a complete inert atmosphere; and annealing the silicon substrate at a temperature of 400.degree. to 1,300.degree. C. in order to remove oxygen present in the independent form or in platinum oxide form within the oxygen containing platinum thin-film and to stablize the entire platinum thin-film. The oxygen containing platinum thin-film layer serves as a glue layer during the depositing step of additional platinum thin-film layer and is converted into pure platinum condition after the annealing step, whereby the silicon substrate substantially does not have any glue layer between the platinum layer and the insulating layer of the silicon substrate.

REFERENCES:
patent: 5164808 (1992-11-01), Evans, Jr. et al.
patent: 5348894 (1994-09-01), Gnade et al.
patent: 5440173 (1995-08-01), Evans, Jr. et al.
patent: 5453347 (1995-09-01), Bullington et al.

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