Etching a substrate: processes – Nongaseous phase etching of substrate – Projecting etchant against a moving substrate or controlling...
Patent
1997-09-30
2000-03-07
Breneman, Bruce
Etching a substrate: processes
Nongaseous phase etching of substrate
Projecting etchant against a moving substrate or controlling...
216 12, 216106, C09D 520
Patent
active
060335890
ABSTRACT:
The present invention discloses a method for depositing a coating layer on an article without edge bead formation by integrating the steps of an edge bead rinsing process with a coating spin-out process such that an edge portion of the wafer can be efficiently cleaned with a cleaning solvent when the coating material is still in its liquid state. While the present invention method can be applied to any coating materials and to any coated substrate, it is particularly suitable for cleaning a spin-on-glass material from a semiconductor wafer such that the wafer edge is not coated with a SOG material and thus particulate contamination caused by cracked SOG from the wafer edge can be avoided.
REFERENCES:
patent: 5705223 (1998-01-01), Bunkofske
Breneman Bruce
Powell Alva C.
Taiwan Semiconductor Manufacturing Co. Ltd.
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