Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Reexamination Certificate
2005-07-13
2008-12-09
Ngo, Ngna (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
C257S485000, C257SE29148, C257SE29338
Reexamination Certificate
active
07462860
ABSTRACT:
An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow between the metal and the semiconductor. The interface layer may include a layer of a passivating material (e.g., made from nitrogen, oxygen, oxynitride, arsenic, hydrogen and/or fluorine) and sometimes also includes a separation layer. In some cases, the interface layer may be a monolayer of a semiconductor passivating material. The interface layer thickness corresponds to a minimum specific contact resistance of less than or equal to 10 Ω-μm2or even less than or equal to 1 Ω-μm2for the electrical device.
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Connelly Daniel J.
Grupp Daniel E.
Acorn Technologies, Inc.
Ngo Ngna
Sonnenschein Nath & Rosenthal LLP
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