Semiconductor device manufacturing: process – Forming schottky junction – Combined with formation of ohmic contact to semiconductor...
Reexamination Certificate
2011-02-08
2011-02-08
Ngo, Ngan (Department: 2893)
Semiconductor device manufacturing: process
Forming schottky junction
Combined with formation of ohmic contact to semiconductor...
C438S775000, C438S778000, C257SE21192, C257SE21302
Reexamination Certificate
active
07884003
ABSTRACT:
An electrical device in which an interface layer is disposed between and in contact with a metal and a Si-based semiconductor, the interface layer being of a thickness effective to depin of the Fermi level of the semiconductor while still permitting current to flow between the metal and the semiconductor. The interface layer may include a layer of a passivating material (e.g., made from nitrogen, oxygen, oxynitride, arsenic, hydrogen and/or fluorine) and sometimes also includes a separation layer. In some cases, the interface layer may be a monolayer of a semiconductor passivating material. The interface layer thickness corresponds to a minimum specific contact resistance of less than or equal to 10 Ω-μm2or even less than or equal to 1 Ω-μm2for the electrical device.
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Connelly Daniel J.
Grupp Daniel E.
Acorn Technologies, Inc.
Ngo Ngan
SNR Denton US LLP
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