Method for dense pixel fabrication and product thereof

Details Method for dense pixel fabrication and product thereof Method for dense pixel fabrication and product thereof

2005-08-16

2005-08-16

Tsai, H. Jey (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S083000, C257S187000, C438S022000, C438S039000, C438S034000

Reexamination Certificate

active

06930319

ABSTRACT:
A method of fabricating a dense pixel array comprising the steps of: (a) printing a photoresist mask and applying said mask to a semiconductor material substrate to form a masked area and an unmasked area on said substrate; (b) applying a photoresist material layer to the unmasked area of the substrate, then applying a metal layer over the photoresist material layer and the substrate, and then applying a solvent to remove the photoresist material layer and said metal layer applied over said photoresist material layer to leave a plurality of metal layers superimposed over the unmasked area of the substrate; (c) removing the substrate to a depressed substrate surface between the metal layers formed in step (b) to form a plurality of pixels each having an upper metal layer; (d) superimposing an insulative layer over each of the metal layers formed in step (c); (e) forming a hole in at least one of the insulative layers formed in step (d) so as to expose the metal layer under the insulative layer; and (f) superimposing a metallic feature over the insulative layers on a plurality of the pixels and electrically connecting said metallic feature to one of the metal layers superimposed over one of said pixels over which the metallic feature is superimposed.

REFERENCES:
patent: 2002/0135034 (2002-09-01), Shigenaka et al.

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