Method for delta-doping in GaAs epitaxial layer grown on silicon

Details Method for delta-doping in GaAs epitaxial layer grown on silicon Method for delta-doping in GaAs epitaxial layer grown on silicon

1992-07-07

1994-01-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

437132, 437133, H01L 2120

Patent

active

052815510

ABSTRACT:
The technique of the delta-doping by metalorganic chemical vapor deposition (MOCVD) in GaAs epitaxial layer at 700.degree.-750.degree. C. after deposition of GaAs heteroepitaxial buffer layer exceeding 3 .mu.m thickness on silicon substrate.

REFERENCES:
patent: 4716130 (1987-12-01), Johnston, Jr. et al.
patent: 5153147 (1992-10-01), Karlick, Jr.
patent: 5168077 (1992-12-01), Ashizawa et al.
patent: 5169798 (1992-12-01), Eaglesham et al.
Parker in "The Physics and Technology of Molecular Beam Epitaxy" Plenum press (1985), pp. 428-434.
Schubert, "Delta Doping of III-V Compound Semiconductors: Fundamentals and Device Applications," J. Vac. Sci. Tech., May/Jun. 1990, pp. 2980-2996.

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