Method for delineation of phase change memory (PCM) cells...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C438S095000, C257SE21068, C257SE21662, C257SE21679, C711S101000, C711S102000, C711S103000

Reexamination Certificate

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07550313

ABSTRACT:
A method for forming a Phase Change Material (PCM) cell structure comprises forming both a lower electrode composed of a PCM layer and a conductive encapsulating upper electrode layer. The PCM is protected from damage by a conductive encapsulating layer. Electrical isolation between adjacent cells is provided by modifying the conductivity of both the PCM layer and the conductive encapsulating upper electrode layer subsequent to deposition thereof, thereby forming high electrical resistance regions between the cells.

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Stefan Lai et al., “Current Status of the Phase Change Memory and its Future,” Electron Devices Meeting, 2003, IEDM '03 Technical Digest, IEEE International (Dec. 8-10, 2003) pp. 10.1.1-10.1.4.

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