Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-03-12
2009-06-30
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185170, C365S185180
Reexamination Certificate
active
07554854
ABSTRACT:
To provide a method of releasing charges which have been injected into charge accumulating layers of nonvolatile memory elements without using a substrate terminal such as a p well or an n well, as a method for deleting data from a NAND-type nonvolatile memory. In the method for deleting data from the NAND-type nonvolatile memory, charges stored in a charge accumulating layer of a first nonvolatile memory element are released by applying a first potential to a bit line and a source line, a second potential to a control gate of the first nonvolatile memory element, and a third potential which is different from the second potential to a control gate of a second nonvolatile memory element.
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Miyake Hiroyuki
Miyazaki Aya
Osame Mitsuaki
Yamazaki Shunpei
Lam David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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