Method for dehydrogenation treatment and method for forming...

Details Method for dehydrogenation treatment and method for forming... Method for dehydrogenation treatment and method for forming...

2011-08-16

2011-08-16

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

C438S482000, C438S486000, C438S487000, C257SE21134

Reexamination Certificate

active

07998841

ABSTRACT:
A dehydrogenation treatment method which includes forming a hydrogenated amorphous silicon film above a non-heat-resistant substrate, and eliminating bonded hydrogen from the hydrogenated amorphous silicon film by irradiating an atmospheric thermal plasma discharge to the hydrogenated amorphous silicon film for a time period of 1 to 500 ms. The surface of the substrate is heated at a temperature of 1000 to 2000° C. by irradiating the atmospheric thermal plasma discharge.

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