Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-06-13
2006-06-13
Geyer, Scott (Department: 2812)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
Reexamination Certificate
active
07060509
ABSTRACT:
The invention is used in the field of materials engineering and relates to a method for defining reference magnetizations which could be used, for example, in magnetic sensor technology components. The object of the present invention is to disclose a method for defining reference magnetizations in layer systems, whereby the reference directions can be selected as desired with regard to number and spatial direction. The object is attained through a method for defining reference magnetizations in layer systems in which at least one layer system is produced by geometrically structuring a hard-magnetic and/or soft-magnetic layer and by applying the hard-magnetic and/or soft magnetic layer to at least one antiferromagnetic layer before, during or after a single-stage or multi-stage thermal treatment, whereby the temperature is increased at least to a temperature greater than the coupling temperature and the layer system is cooled afterwards.
REFERENCES:
patent: 6270588 (2001-08-01), Takano et al.
patent: 6727105 (2004-04-01), Brug et al.
patent: 10-74658 (1998-03-01), None
patent: 11273034 (1999-10-01), None
Database Inspec Online? Institute of electrical Engineers, Stevenage, GB, Tsunda M. Et al., “Reversible Change of Direction of the Exchange Anisotropy of Polycrystalline Ferromagnetic/Antiferromagnetic Bilayers by thermal Annealing in Magnetic Field”, Database accession No. 700615, XP02212605.
Patent Abstracts of Japan. vol. 2000, No. 1, Jan. 31, 2000.
Patent Abstracts of Japan, vol. 1998, No. 08, Jun. 30, 1998.
English Language translation of Masakiyo Tsunoda et al., “A Reversible Change of Induction of The Exchange Anisotropy of Polycrystalline Ferromagnetic/Antiferromagnetic Bilayers by Thermal Annealing In Magnetic Field”, Journal of the Magnetics Society Japan, 2001, Magnetics Society of Japan, vol. 25, No. 4, pt.. 2, pp. 827-830 (Apr. 15, 2001).
De Haas Oliver
Schäfer Rudolf
Schneider Claus
Geyer Scott
Leibniz-Institut fuer Festkoerper- und Werkstoffforschung Dresde
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