Method for defect and conductivity engineering of a...

Details Method for defect and conductivity engineering of a... Method for defect and conductivity engineering of a...

2005-05-03

2005-05-03

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S310000

Reexamination Certificate

active

06888150

ABSTRACT:
The invention relates to a method for defect and conductivity engineering of an individual part in a conducting nanoscaled structure by generating heat-induced migration, melting, sputtering and/or evaporation of conductive material of the nanoscaled structure by directing a focussed electron beam on this individual part of the structure to be engineered. The invention further relates to the use of a secondary electron microscope having a filter for detecting back scattered electrons for such a method and a respective secondary electron microscope having such a filter for detecting back scattered electrons.

REFERENCES:
patent: 4880496 (1989-11-01), Nebenzahl et al.
patent: 4933552 (1990-06-01), Lee
patent: 4943769 (1990-07-01), Golladay et al.
patent: 5583344 (1996-12-01), Mizumura et al.
patent: 6300629 (2001-10-01), Lawrence
patent: 20010027917 (2001-10-01), Ferranti et al.
patent: WO 90 14683 (1990-11-01), None
patent: WO 02 27404 (2002-04-01), None
Patent Abstracts of Japan vol. 013, No. 268 (E-775), Jun. 20, 1989, & JP 01 059750 A (Mitsubishi Electric Corp), Mar. 7 1989.

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