Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2005-11-14
2008-09-02
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S113000, C257SE21237, C257SE21347, C257SE21499
Reexamination Certificate
active
07419885
ABSTRACT:
The method for dicing a wafer including the steps of: reducing a thickness of a wafer to at least 0.1mm or less; forming a protection sheet tightly on one side of the wafer, the protection sheet having a Vickers hardness of 2 or more; and dicing the wafer by a grindstone, the wafer having the protection sheet thereon.
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patent: 5294381 (1994-03-01), Iguchi et al.
patent: 5308708 (1994-05-01), Takeda et al.
patent: 5495126 (1996-02-01), Iguchi et al.
patent: 5855998 (1999-01-01), Tanabe et al.
patent: 6193585 (2001-02-01), Tanabe et al.
patent: 06-151265 (1994-05-01), None
patent: 10-092778 (1998-04-01), None
patent: 2002-270676 (2002-09-01), None
Nhu David
Oliff & Berridg,e PLC
TDK Corporation
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