Method for cutting a semiconductor crystal into wafers

Details Method for cutting a semiconductor crystal into wafers Method for cutting a semiconductor crystal into wafers

1981-07-15

1983-10-11

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412946, 20412965, 20412975, 204224M, C25F 312, B23P 110

Patent

active

044090757

ABSTRACT:
Method of separating a semiconductor crystal, in particular a rod-like semiconductor crystal, into wafers by first providing it with a masking layer of non-conducting material interrupted by stripes. The semiconductor crystal is biased as an anode and is immersed in an electrolyte which is provided with an electrode serving as the cathode. The oxide layers produced in the regions of the semiconductor crystal which are not masked, are removed mechanically.

REFERENCES:
patent: 3128213 (1964-04-01), Gault et al.
patent: 3962052 (1976-06-01), Abbas et al.
patent: 4096619 (1978-06-01), Cook, Jr.
patent: 4193852 (1980-03-01), Inoue

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