Method for cutting a hard to cut wafer

Details Method for cutting a hard to cut wafer Method for cutting a hard to cut wafer

1995-10-10

1997-10-21

Peterson, Kenneth E.

Severing by tearing or breaking

Methods

With preliminary weakening

225 935, B26F 312

Patent

active

056787448

ABSTRACT:
A method for breaking a hard to cut wafer, such as a SrTiO.sub.3 single-crystal wafer or amorphous wafer, into sections comprises the steps of scribing the wafer to form a groove along a breaking line, heating the groove for a period of about between 30 seconds to 5 minutes, cooling the wafer to a room temperature, and then breaking the wafer along the breaking line by applying a bending moment about the breaking line. The wafer can have an oxide superconductor film, such as Y.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7.delta., deposited on its surface before the wafer is cut.

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