Method for cutting a block of material and forming a thin film

Adhesive bonding and miscellaneous chemical manufacture – Methods – Surface bonding and/or assembly therefor

Reexamination Certificate

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C156S345420, C438S458000

Reexamination Certificate

active

07029548

ABSTRACT:
A process for cutting out a block of material includes a step of introducing ions in the block thereby forming an embrittled zone and defining at least one superficial part of the block. The method also includes a step of forming at least one separation initiator at the level of the embrittled zone, wherein the step of forming the separation initiator includes implanting ions of an ionic nature different from that introduced during the preceding step. The method further includes a step of separating at the level of the embrittled zone the superficial part of the block from a remaining part of the block from the separation initiator, wherein the separation step includes at least one of a thermal treatment and the application of mechanical forces acting between the superficial part and the embrittled zone.

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A. Agarwal et al.: “Efficient production of silicon-on-insulator films by co-Impantation of HE+ with H+” Applied Physics Letters, American Institute of Physics, vol. 72, No. 9, pp. 1086-1088 Mar. 2, 1998.

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