Method for current sensing with biasing of source and P-well...

Details Method for current sensing with biasing of source and P-well... Method for current sensing with biasing of source and P-well...

2007-06-29

2009-02-10

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185170, C365S185270

Reexamination Certificate

active

07489554

ABSTRACT:
Current sensing is performed in a non-volatile storage device for a non-volatile storage element. A voltage is applied to a selected word line of the first non-volatile storage element, and source and p-well voltages are applied to a source and a p-well, respectively, associated with the non-volatile storage element. The source and p-well voltages are regulated at respective positive DC levels to avoid a ground bounce, or voltage fluctuation, which would occur if the source voltage at least was regulated at a ground voltage. A programming condition of the non-volatile storage element is determined by sensing a current in a NAND string of the non-volatile storage element. The sensing can occur quickly since there is no delay in waiting for the ground bounce to settle.

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U.S. Appl. No. 11/771,997, filed Jun. 29, 2007.

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