Method for curing spin-on-glass film by utilizing ultraviolet ir

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437173, H01L 21469

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049835467

ABSTRACT:
A method for curing spin-on-glass formed on a wafer film which insulates the metal layers and flattens any step difference in the process for manufacturing a multi-layered metal layer of a highly integrated semiconductor device which comprises establishing a predetermined initial temperature in a heating chamber with an ultraviolet light source. A wafer, on which a SOG film to be cured is formed, is then introdued into the heated chamber and the temperature gradually increased to a predetermined maximum temperature. The SOG film is irradiated with ultraviolet light at a predetermined wavelength simultaneously with the application of heat at the maximum temperature for a predetermined time. The wafer is then cooled.

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patent: 4894351 (1990-01-01), Batty
patent: 4913930 (1990-04-01), Getson
Chiang, C. et al, "Defects Study on Spin on Glass Planarization Technology", V--MIC Conf., IEEE Jun. 15-16, 1987, pp. 404-421.
Vines, L. B. et al, "Interlevel Dielectric Planarization with Spin-on Glass Films", V-MIC Conf., IEEE Jun. 9-10, 1986, pp. 506-515.

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