Method for crystallizing silicon using a ramp shaped laser beam

Details Method for crystallizing silicon using a ramp shaped laser beam Method for crystallizing silicon using a ramp shaped laser beam

2005-11-02

2010-11-09

Kunemund, Robert M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

Organic product

C117S007000, C117S008000, C117S009000, C117S048000, C117S933000

Reexamination Certificate

active

07828894

ABSTRACT:
A crystallization method, includes: forming an amorphous silicon layer on a substrate; forming a first crystallization region by irradiating the amorphous silicon layer with a laser beam having a ramp shaped cross sectional profile that decreases in a scanning direction; and performing a second crystallization by moving a predetermined length in a scanning direction so as to be partially overlapped with the first crystallization region formed by the first crystallization.

REFERENCES:
patent: 6372039 (2002-04-01), Okumura et al.
patent: 7318866 (2008-01-01), Im

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