Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state – Using heat
Reexamination Certificate
2008-06-10
2008-06-10
Kunemund, Robert (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
Using heat
C117S043000, C117S044000, C117S045000, C117S046000, C117S073000, C117S074000, C117S904000, C438S482000, C438S486000, C438S155000, C438S166000, C257S071000, C257S072000
Reexamination Certificate
active
07384476
ABSTRACT:
A method for crystallizing silicon is provided. The method includes: forming an amorphous silicon layer on a substrate; aligning a mask above the substrate, the mask being divided into a plurality of blocks, each block having at least two transmission patterns, the transmission patterns of one block and the transmission patterns of another adjacent block being complimentary with each other and the mask including at least two diffraction patterns disposed between the transmission patterns; forming a first crystallization region on the amorphous silicon layer by irradiating a laser beam through the transmission patterns of the mask; and displacing the substrate or the mask by a predetermined distance and irradiating a laser beam onto the substrate to recrystallize the crystallization region using the laser beam that passes through the diffraction patterns, and forming a second crystallization region using the laser beam that passes through the transmission patterns.
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Kunemund Robert
LG Display Co. Ltd.
McKenna Long & Aldridge LLP
Rao G. Nagesh
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