Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1992-02-19
1994-09-06
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
423158, 423278, 117 74, C30B 708
Patent
active
053438272
ABSTRACT:
A method of growing optical quality beta barium borate; crystals from a pure NaCl fluxed melt. The method comprises maintaining particular thermal field conditions throughout the melt and slowly cooling the melt to cause beta barium borate to crystallize from the melt. The rate of cooling may be at a rate of not greater than 3.degree. C. per day. The method may utilize a seed crystal, suspended into the melt, so that the beta barium borate may crystallize on the seed crystal.
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patent: 4931133 (1990-06-01), Gualtieri et al.
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Journal of Crystal Growth, 106, ".beta.-Barium Borate Single Crystal Grown by a Direct Czochralski Method" by K. Itoh and F. Marumo, pp. 728-731, dated 1990.
Journal of Crystal, 89, "Growth and Characterization of Low Temperature Phase Barium Metaborate Crystals" by L. K. Cheng, W. Bosenberg and C. L. Tang, pp. 553-559, dated 1988.
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Bordui Peter F.
Calvert George D.
Breneman R. Bruce
Codispoti Joseph S.
Crystal Technology, Inc.
Garrett Felisa
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