Method for crystal growth

Details Method for crystal growth Method for crystal growth

1994-09-09

1997-01-07

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117954, 437107, C30B 2502

Patent

active

055912605

ABSTRACT:
The invention provides a method for growing GaAs crystals wherein GaAs crystal growth is carried out by means of an equipment by which Indium containing crystals were grown before carrying out the GaAs crystal growth, and the GaAs crystal growth is caused by thermal organic metal decomposition technique using trimethyl gallium as a source of gallium (Ga).

REFERENCES:
patent: 4937204 (1990-06-01), Ishibasha et al.

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