Semiconductor device manufacturing: process – Making regenerative-type switching device – Having field effect structure
Reexamination Certificate
2005-03-01
2005-03-01
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making regenerative-type switching device
Having field effect structure
C438S268000, C438S424000
Reexamination Certificate
active
06861296
ABSTRACT:
A gate isolation structure of a semiconductor device and method of making the same provides a trench in a silicon substrate, wherein a dielectric layer is formed on sidewalls and bottom of the trench, the dielectric layer having a first thickness on the sidewalls and a second thickness at the bottom that is greater than the first thickness. The thicker dielectric layer at the bottom substantially reduces gate charge to reduce the Miller Capacitance effect, thereby increasing the efficiency of the semiconductor device and prolonging its life.
REFERENCES:
patent: 4914058 (1990-04-01), Blanchard
patent: 4941026 (1990-07-01), Temple
patent: 4967245 (1990-10-01), Cogan et al.
patent: 4992390 (1991-02-01), Chang
patent: 5126807 (1992-06-01), Baba et al.
patent: 5164325 (1992-11-01), Cogan et al.
patent: 5242845 (1993-09-01), Baba et al.
patent: 5298781 (1994-03-01), Cogan et al.
patent: 5770878 (1998-06-01), Beasom
patent: 5801417 (1998-09-01), Tsang et al.
patent: 5879994 (1999-03-01), Kwan et al.
patent: 5960271 (1999-09-01), Wollesen et al.
patent: 5981344 (1999-11-01), Hshieh et al.
patent: 5998833 (1999-12-01), Baliga
patent: 6262453 (2001-07-01), Hshieh
patent: 20010049167 (2001-12-01), Madson
patent: 01-192174 (1989-08-01), None
Wolf and Tauber; “Silicon Processing for the VLSI Era vol. 1: Process Technology”; p. 168; Lattice Press; Sunset Beach, CA; 1986.*
Baliga, J. “Options for CVD of Dielectrics Include Low-k Materials,”Technical Literature from Semiconductor InternationalJun. 1998, 4 pages total.
Curtis, T.O. et al. “APCVD TEOS: O3 Advanced Trench Isolation Applications,”Technical Literature from Semiconductor Fabtech, 8 pages total, 9th Ed.
Moghadam, F. “Delivering Value Around New Industry Paradigms,”Technical Literature from Applied MaterialsNov. 1999, pp. 1-11, vol. 1, Issue 2.
Technical Literature from Quester Technology. “Model APT-4300 300mm Atmospheric TEOS/Ozone CVD System,” 2 pages total.
Technical Literature from Questar Technology, “Model APT-6000 Atmospheric TEOS-Ozone CVD System,” 4 pages total.
Technical Literature from Silicon Valley Group Thermal Systems, APNext, “High Throughput APCVD Cluster Tool for 200mm/300mm Wafer Processing,” 2 pages total.
Hurst Henry W.
Murphy James J.
Fairchild Semiconductor Corporation
Fourson George
Toledo Fernando L.
Townsend and Townsend / and Crew LLP
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