Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Reexamination Certificate
2007-05-30
2008-11-25
Ruthkosky, Mark (Department: 1795)
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
C429S188000, C429S006000
Reexamination Certificate
active
07455700
ABSTRACT:
A method for forming an anode supported electrochemical device, such as a SOFC, is disclosed. A thin layer of electrolyte310is supported on an anode layer comprised of an active anode layer320and a bulk anode layer340. The bulk anode layer includes silicon carbide340in an amount between about 0.5 and 10% by weight. A cathode layer on an opposing side of the electrolyte completes the cell. The presence of the silicon carbide340in the supporting anode layer340has been found to reduce room temperature camber due to thermal expansion coefficient mismatches.
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Meinhardt Kerry D.
Simner Steven P.
Sprenkle Vincent L.
Battelle (Memorial Institute)
Maughan Derek H.
O'Neill Karie Amber
Ruthkosky Mark
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