Method for creating self-aligned, non-patterned contact areas an

Details Method for creating self-aligned, non-patterned contact areas an Method for creating self-aligned, non-patterned contact areas an

1990-07-30

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437193, 437919, H01L 2172, H01L 27108

Patent

active

051048221

ABSTRACT:
In a multi-layered integrated memory circuit, a method for using sacrificial layers and insulating "sticks" is disclosed to provide a contact between two layers, where the contact does not short to an intervening layer. This invention provides this with minimal extra processing by using sacrificial layers with appropriate etch and etch stop properties. As these layers are etched, additional layers which alternate in the same conducting/insulating pattern are exposed. Each etch stops on either a conductive or insulative layer. A contact layer may then be deposited which connects the uppermost capacitor plate to the pass transistor of the memory cell.

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