Method for creating barriers for copper diffusion

Details Method for creating barriers for copper diffusion Method for creating barriers for copper diffusion

2006-10-03

2006-10-03

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S752000, C257S762000, C257S760000, C257S741000, C257S744000, C257S773000, C257S739000, C432S120000, C432S120000, C432S120000, C432S120000

Reexamination Certificate

active

07115991

ABSTRACT:
A barrier layer for a semiconductor device is provided. The semiconductor device comprises a dielectric layer, an electrically conductive copper containing layer, and a barrier layer separating the dielectric layer from the copper containing layer. The barrier layer comprises a silicon oxide layer and a dopant, where the dopant is a divalent ion, which dopes the silicon oxide layer adjacent to the copper containing layer.A method of forming a barrier layer is provided. A silicon oxide layer with a surface is provided. The surface of the silicon oxide layer is doped with a divalent ion to form a barrier layer extending to the surface of the silicon oxide layer. An electrically conductive copper containing layer is formed on the surface of the barrier layer, where the barrier layer prevents diffusion of copper into the substrate.

REFERENCES:
patent: 3632438 (1972-01-01), Carlson et al.
patent: 3710205 (1973-01-01), Swanson
patent: 4352716 (1982-10-01), Schaible et al.
patent: 6057223 (2000-05-01), Lanford et al.
patent: 6077775 (2000-06-01), Stumborg et al.
patent: 6083794 (2000-07-01), Hook et al.
patent: 6083818 (2000-07-01), Stumborg et al.
patent: 6117770 (2000-09-01), Pramanick et al.
patent: 6211066 (2001-04-01), Stumborg et al.
patent: 6226173 (2001-05-01), Welsch et al.
patent: 6261963 (2001-07-01), Zhao et al.
patent: 6355555 (2002-03-01), Park
patent: 6441492 (2002-08-01), Cunningham
patent: 6566247 (2003-05-01), Stumborg et al.
patent: 6633085 (2003-10-01), Besser et al.
patent: 6703307 (2004-03-01), Lopatin et al.
patent: 6703308 (2004-03-01), Besser et al.
patent: 6881669 (2005-04-01), Chu et al.
patent: 2001/0035581 (2001-11-01), Stumborg et al.
patent: 2001/0040238 (2001-11-01), Stumborg et al.
patent: 2002/0076925 (2002-06-01), Marieb et al.
patent: 2003/0057526 (2003-03-01), Chung et al.
patent: 63290559 (1998-11-01), None

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