Method for correcting pattern critical dimension in photomask

Details Method for correcting pattern critical dimension in photomask Method for correcting pattern critical dimension in photomask

2011-08-09

2011-08-09

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C438S706000

Reexamination Certificate

active

07993802

ABSTRACT:
A method for correcting pattern critical dimension (CD) in a photomask includes forming a multilayer structure over a substrate by stacking at least two thin films capable of forming a compound by application of energy from an energy source; forming a light-shielding layer over the multilayer structure; forming a light-shielding layer pattern that selectively exposes the multilayer structure by selectively etching the light-shielding layer; detecting a correction region requiring a CD correction by measuring a CD of the light-shielding layer pattern; and forming a compound, by which the CD is corrected by a transmittance difference between the multilayer structure and the correction region, by applying an energy to a region of the multilayer structure corresponding to the detected correction region to react the thin films.

REFERENCES:
patent: 2006/0019174 (2006-01-01), Ahn et al.
patent: 2006/0147818 (2006-07-01), Lee
patent: 2008/0044742 (2008-02-01), Jung et al.
patent: 2009/0253052 (2009-10-01), Ha
patent: 11-202475 (1999-07-01), None
patent: 10-2006-007777 (2006-01-01), None
patent: 10-2006-0070356 (2006-06-01), None
patent: 10-2006-0104825 (2006-10-01), None

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