Method for correcting local loading effects in the etching...

Details Method for correcting local loading effects in the etching... Method for correcting local loading effects in the etching...

2006-08-29

2006-08-29

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C716S030000

Reexamination Certificate

active

07097947

ABSTRACT:
A method for correcting local loading-effects in photomask etching includes the steps of determining the location-dependent density of structures of a mask; determining the location-dependent strength of the loading effect with the aid of the structure density; and determining location-dependent correction values for the mask structures with the aid of the strength of the loading effect for the purpose of compensating the loading effect. It is recognized that the strength of location-dependent loading effects can be predicted with the aid of the location-dependent structure density and therefore compensated.

REFERENCES:
patent: 5552996 (1996-09-01), Hoffman et al.
patent: 6584609 (2003-06-01), Pierrat et al.
patent: 6684382 (2004-01-01), Liu
patent: 198 46 503 (1999-09-01), None

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