Method for correcting defects in a phase shift mask

Details Method for correcting defects in a phase shift mask Method for correcting defects in a phase shift mask

1997-05-20

1999-07-13

Powell, William

Etching a substrate: processes

Forming or treating optical article

216 41, B44C 122

Patent

active

059222174

ABSTRACT:
A method for correcting defects in a phase shift mask is disclosed. The method includes the steps of: forming an etch stopper layer and a phase shift layer on a substrate in succession; forming light shielding layer patterns on the phase shift layer, the light shielding layer patterns having a plurality of opened regions; defining phase shift regions on selected regions of the phase shift layer in the opened regions; selectively removing the phase shift layer in the phase shift regions to a thickness required for phase shifting; and eliminating a defect by simultaneous further etching the same amount of material from the defective phase shift layer and an adjacent open region. This corrects the defect by converting the defective phase shift region to a non-phase-shift region and converting the adjacent open region into a phase shift region.

REFERENCES:
patent: 5468337 (1995-11-01), Miyatake
patent: 5569392 (1996-10-01), Miyoshi et al.

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