Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2004-07-18
2010-06-15
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S290000
Reexamination Certificate
active
07736819
ABSTRACT:
A method for compensating for critical dimension (CD) variations of pattern lines of a wafer, by the correcting the CD of the corresponding photomask. The photomask comprises a transparent substrate having two substantially opposite surfaces, a first back surface and a second front surface on which front surface an absorbing coating is provided, on which the pattern lines were formed by removing the coating at the pattern lines. The method comprises: determining CD variations across regions of a wafer exposure field relating to the photomask; and providing Shading Elements (SE) within the substrate of the photomask in regions which correlates to regions of the wafer exposure field where CD variations greater than a predetermined target value were determined, whereby the shading elements attenuate light passing through the regions, so as to compensate for the CD variations on the wafer and hence provide and improved CD tolerance wafer.
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patent: WO 03/071358 (2003-08-01), None
Jong Rak Park et al , “Improvement of Shot Uniformity on a Wafer by Controlling Backside Transmittance Distribution of a Photomask”, Optical Microlithography, Proceedings of SPIE, vol. 5040. 2003, pp. 553-560.
Alfred Kwok-Kit Wong. “Resolution Enhancement Techniques in Optical Lithography”, SPIE Press 2001, Chapter 1 3 4. pp. 18-23.
Ben-Zvi Guy
Dmitriev Vladimir
Guletsky Nikolay N.
Oshemkov Sergey
Zait Eitan
Fraser Stewart A
Huff Mark F
Pearl Cohen Zedek Latzer LLP
Pixer Technology Ltd
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